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システムにおけるNANDの平均的な電力／エネルギー消費量の推定は、システムの電力／エネルギー予算に対してNANDデバイスの消費電力が果たす役割を見極め、NANDの運用を前提に予算を最適化する方法を判断するうえで有益です。 このツールは、ホストチャネル1個あたりのNAND電流／電力／エネルギー消費量と、「NAND読み取り-プログラム-消去-アイドル-スタンバイ」ワークロードによるシステム全体のNAND電力／エネルギー消費量を推定します。
この計算機の利用対象者は、使用するNANDデバイス、NAND運用のタイプ、該当する電流（Icc）仕様、入出力バイト数、該当するNANDアレイのビジー時間（例：tR、tPROG、tBERS）を理解したうえで、NANDの電力／エネルギー消費量を推定することを希望する方です。 この計算機を使用するには、NANDホストデータの入出力インターフェース速度、NAND LUN／ダイのシステム並列使用、NANDへの電圧供給レベル、「NAND読み取り-プログラム-消去-アイドル-スタンバイ」ワークロード、ボードトレース（コントローラDQバス）およびその他の物理的なシステム要素の電気容量などを含む（ただし、これらに限定されない）システムの物理特性および運用特性を知っていることが前提となります。
Enter a value for each item
This value should be either 1 or 2
This value should not be greater than the value used in the
'Number of NAND LUNs/die per host channel' row
This value should not be greater than the value used in the
'Number of NAND LUNs/die per host channel' row
This value should not be greater than the value used in the
'Number of NAND LUNs/die per host channel' row
This value should not be greater than the value used in the
'Number of NAND LUNs/die per host channel' row
This value should be 1, 2, or 3
Results
Total NAND Power for all host channels
(in W)
Learn More
This total value assumes each NAND host channel is performing the same NAND operations in the same percentage workload conditions where all NAND die on the host channel are used
roughtly equally.
Must add up to 100%
NAND system current per channel (in mA)
NAND system power per channel (in W)
NAND system energy per channel (in mJ)
NAND Vcc rail during NAND array
operations
NAND Vccq rail during NAND array
operations
NAND Vcc rail during data output
NAND Vccq rail during data output
Learn More
For NAND NV-DDR / NV-DDR2 / NV-DDR3 / NV-LPDDR4 modes of operation, NAND complimentary signals are assumed to be used. These values are calculated using the equations: Current = 1/2 * #
of switching signals * Output Frequency * Vccq * Capactive Load Power = 1/2 * # of switching signals * Output Frequency * Vccq * Vccq * Capactive Load. For NAND devices that have Iccq4r specifications, those contributions are added to the power calculation. Energy = Power * time of operation
NAND Vpp rail during array
operations (if used)
NAND system current per channel (in mA)
NAND system power per channel (in W)
NAND system energy per channel (in mJ)
NAND Vcc rail during NAND array
operations
NAND Vccq rail during NAND array
operations
NAND Vcc rail during data output
NAND Vccq rail during data output
Learn More
For NAND NV-DDR / NV-DDR2 / NV-DDR3 / NV-LPDDR4 modes of operation, NAND complimentary signals are assumed to be used. These values are calculated using the equations: Current = 1/2 * #
of switching signals * Output Frequency * Vccq * Capactive Load Power = 1/2 * # of switching signals * Output Frequency * Vccq * Vccq * Capactive Load. For NAND devices that have Iccq4r specifications, those contributions are added to the power calculation. Energy = Power * time of operation
NAND Vpp rail during array
operations (if used)
NAND system current per channel (in mA)
NAND system power per channel (in W)
NAND system energy per channel (in mJ)
NAND Vcc rail during NAND array
operations
NAND Vccq rail during NAND array
operations
NAND Vcc rail during data input
NAND Vccq rail during data input
NAND Vpp rail during array
operations (if used)
NAND system current per channel (in mA)
NAND system power per channel (in W)
NAND system energy per channel (in mJ)
NAND Vcc rail during NAND array
operations
NAND Vccq rail during NAND array
operations
NAND Vpp rail during array
operations (if used)